Optical band gap of BiFe O3 grown by molecular-beam epitaxy
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.2901160
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Abstract |
BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.
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Notes |
cited By 256
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Journal |
Applied Physics Letters
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Volume |
92
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Year of Publication |
2008
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Number |
14
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ISSN Number |
00036951
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Keywords | |
Research Areas | |
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