@article{33585,
  keywords = {Thin films, Molecular beam epitaxy, Substrates, Spectroscopic ellipsometry, Bismuth compounds, Energy gap, Four-circle x-ray diffraction, Multiple-angle spectroscopic ellipsometry, Optical band gap, Oxygen activity},
  author = {J.F Ihlefeld and N.J Podraza and Z.K Liu and R.C Rai and X Xu and T Heeg and Y.B Chen and J Li and R.W Collins and J.L Musfeldt and X.Q Pan and J Schubert and Ramamoorthy Ramesh and D.G Schlom},
  title = {Optical band gap of BiFe O3 grown by molecular-beam epitaxy},
  abstract = {BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.},
  year = {2008},
  journal = {Applied Physics Letters},
  volume = {92},
  number = {14},
  issn = {00036951},
  doi = {10.1063/1.2901160},
  note = {cited By 256},
  language = {eng},
}