TY - JOUR
KW - Thin films
KW - Molecular beam epitaxy
KW - Substrates
KW - Spectroscopic ellipsometry
KW - Bismuth compounds
KW - Energy gap
KW - Four-circle x-ray diffraction
KW - Multiple-angle spectroscopic ellipsometry
KW - Optical band gap
KW - Oxygen activity
AU - J.F Ihlefeld
AU - N.J Podraza
AU - Z.K Liu
AU - R.C Rai
AU - X Xu
AU - T Heeg
AU - Y.B Chen
AU - J Li
AU - R.W Collins
AU - J.L Musfeldt
AU - X.Q Pan
AU - J Schubert
AU - Ramamoorthy Ramesh
AU - D.G Schlom
AB - BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2901160
LA - eng
M1 - 14
N1 - cited By 256
N2 - BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.
PY - 2008
T2 - Applied Physics Letters
TI - Optical band gap of BiFe O3 grown by molecular-beam epitaxy
VL - 92
SN - 00036951
ER -