Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3
| Publication Type | Journal Article
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| Authors | |
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| DOI |
10.1002/adma.201400557
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| Abstract |
Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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| Notes |
cited By 50
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| Journal |
Advanced Materials
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| Volume |
26
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| Year of Publication |
2014
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| Number |
25
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| Pagination |
4376-4380
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| Publisher |
Wiley-VCH Verlag
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| ISSN Number |
09359648
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| Keywords | |
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