@article{33432,
  keywords = {Nanotechnology, Phase boundaries, Bismuth ferrite, Electronic properties, Complex oxides, Interfaces (materials), Electric conductivity, Strong correlation, Degree of control, Electrical switching, Electronic conductivity, Highly strained, Nanoscale},
  author = {J Seidel and M Trassin and Y Zhang and P Maksymovych and T Uhlig and P Milde and D Köhler and A.P Baddorf and S.V Kalinin and L.M Eng and X Pan and Ramamoorthy Ramesh},
  title = {Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3},
  abstract = {Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.},
  year = {2014},
  journal = {Advanced Materials},
  volume = {26},
  number = {25},
  pages = {4376-4380},
  publisher = {Wiley-VCH Verlag},
  issn = {09359648},
  doi = {10.1002/adma.201400557},
  note = {cited By 50},
  language = {eng},
}