TY - JOUR
KW - Nanotechnology
KW - Phase boundaries
KW - Bismuth ferrite
KW - Electronic properties
KW - Complex oxides
KW - Interfaces (materials)
KW - Electric conductivity
KW - Strong correlation
KW - Degree of control
KW - Electrical switching
KW - Electronic conductivity
KW - Highly strained
KW - Nanoscale
AU - J Seidel
AU - M Trassin
AU - Y Zhang
AU - P Maksymovych
AU - T Uhlig
AU - P Milde
AU - D Köhler
AU - A.P Baddorf
AU - S.V Kalinin
AU - L.M Eng
AU - X Pan
AU - Ramamoorthy Ramesh
AB - Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
BT - Advanced Materials
DO - 10.1002/adma.201400557
LA - eng
M1 - 25
N1 - cited By 50
N2 - Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PB - Wiley-VCH Verlag
PY - 2014
SP - 4376
EP - 4380
T2 - Advanced Materials
TI - Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3
VL - 26
SN - 09359648
ER -