Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation

Publication Type
Journal Article
Authors
LBL Report Number
LBNL-41442
Abstract

A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination

Notes

LBNL-41442 NOT IN FILE

Journal
Journal of Applied Physics
Volume
83
Year of Publication
1998
Pagination
4462-4465
Accession Number
100
Keywords
Organizations
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