TY - JOUR
KW - Model
KW - USA
KW - Profiles
KW - Surface
KW - Emission
KW - Band gap
KW - Behavior
KW - Material
KW - Ablation
KW - Laser
KW - Time
KW - Ca
KW - Plasma
KW - Dependence
KW - Fluence
KW - Laser fluence
KW - Properties
KW - Property
KW - Pulses
KW - Excitation
KW - Picosecond
KW - Picosecond laser
KW - Thermal
KW - Electron
KW - Melting
KW - Dynamics
KW - Silicon
KW - Semiconductor
KW - Profile
KW - Threshold
KW - Semiconductors
KW - Circulation
KW - Electron emission
KW - Electron-emission
KW - Yield
KW - Auger
KW - Narrow
KW - Phonon
KW - Recombination
KW - Surface melting
KW - Thermionic electron emission
KW - Thermionic emission
AU - Samuel S Mao
AU - Xianglei Mao
AU - Jong-Hyun Yoo
AU - Ralph Greif
AU - Richard E Russo
AB - <p>A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination</p>
AD - <p>Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA</p>
AN - 100
BT - Journal of Applied Physics
C2 - LBNL-41442
LA - eng
LB - Laser
N1 - <p>LBNL-41442 NOT IN FILE</p>
N2 - <p>A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination</p>
PY - 1998
SP - 4462
EP - 4465
T2 - Journal of Applied Physics
TI - Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation
VL - 83
ER -