Scaling of ferroelectric properties in La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors

Publication Type
Journal Article
Authors
DOI
10.1063/1.111848
Abstract
The scaling of ferroelectric properties with the capacitor size has been studied using epitaxial La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures grown on Si. Discrete, large area capacitors were fabricated using a shadow mask or lift-off process. Capacitors with areas smaller than 10-5 cm 2 were fabricated by a full-wafer process involving argon ion milling. The fatigue, aging, and retention characteristics of the capacitors fabricated by ion milling are commensurate with those of the discrete capacitors fabricated by the shadow mask technique. These results are very relevant with respect to the ultimate application of the capacitors in high density nonvolatile memories.
Notes
cited By 49
Journal
Applied Physics Letters
Volume
64
Year of Publication
1994
Number
12
Pagination
1588-1590
ISSN Number
00036951
Research Areas
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