TY - JOUR
AU - Ramamoorthy Ramesh
AU - B Dutta
AU - T.S Ravi
AU - J Lee
AU - T Sands
AU - V.G Keramidas
AB - The scaling of ferroelectric properties with the capacitor size has been studied using epitaxial La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures grown on Si. Discrete, large area capacitors were fabricated using a shadow mask or lift-off process. Capacitors with areas smaller than 10-5 cm 2 were fabricated by a full-wafer process involving argon ion milling. The fatigue, aging, and retention characteristics of the capacitors fabricated by ion milling are commensurate with those of the discrete capacitors fabricated by the shadow mask technique. These results are very relevant with respect to the ultimate application of the capacitors in high density nonvolatile memories.
BT - Applied Physics Letters
DO - 10.1063/1.111848
LA - eng
M1 - 12
N1 - cited By 49
N2 - The scaling of ferroelectric properties with the capacitor size has been studied using epitaxial La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures grown on Si. Discrete, large area capacitors were fabricated using a shadow mask or lift-off process. Capacitors with areas smaller than 10-5 cm 2 were fabricated by a full-wafer process involving argon ion milling. The fatigue, aging, and retention characteristics of the capacitors fabricated by ion milling are commensurate with those of the discrete capacitors fabricated by the shadow mask technique. These results are very relevant with respect to the ultimate application of the capacitors in high density nonvolatile memories.
PY - 1994
SP - 1588
EP - 1590
T2 - Applied Physics Letters
TI - Scaling of ferroelectric properties in La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors
VL - 64
SN - 00036951
ER -