Nanoelectromechanical switches by controlled switchable cracking
Publication Type | Journal Article
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Authors | |
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DOI |
10.1109/LED.2019.2917924
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Abstract |
Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic. © 1980-2012 IEEE.
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Notes |
cited By 1
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Journal |
IEEE Electron Device Letters
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Volume |
40
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Year of Publication |
2019
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Number |
7
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Pagination |
1209-1212
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Publisher |
Institute of Electrical and Electronics Engineers Inc.
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ISSN Number |
07413106
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Keywords | |
Research Areas | |
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