Galvanomagnetic properties of epitaxial MnAl films on GaAs

Publication Type	Journal Article

Authors	M.L Leadbeater S .J Jr F Derosa J.P Harbison T Sands Ramamoorthy Ramesh L.T Florez V.G Keramidas
DOI	10.1063/1.348298
Abstract	Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.
Notes	cited By 49
Journal	Journal of Applied Physics
Volume	69
Year of Publication	1991
Number	8
Pagination	4689-4691
ISSN Number	00218979
Organizations	No Organization
Research Areas	Ramesh Lab
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