Galvanomagnetic properties of epitaxial MnAl films on GaAs
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.348298
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Abstract |
Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.
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Notes |
cited By 49
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Journal |
Journal of Applied Physics
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Volume |
69
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Year of Publication |
1991
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Number |
8
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Pagination |
4689-4691
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ISSN Number |
00218979
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Research Areas | |
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