%0 Journal Article
%A M.L Leadbeater
%A S .J Jr
%A F Derosa
%A J.P Harbison
%A T Sands
%A Ramamoorthy Ramesh
%A L.T Florez
%A V.G Keramidas
%B Journal of Applied Physics
%D 1991
%G eng
%P 4689-4691
%R 10.1063/1.348298
%T Galvanomagnetic properties of epitaxial MnAl films on GaAs
%V 69
%X Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.