Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films

Publication Type	Journal Article

Authors	L Chen J Ouyang C.S Ganpule V Nagarajan Ramamoorthy Ramesh A.L Roytburd
DOI	10.1063/1.1633970
Abstract	A cylindrical 180° domain was stabilized by the formation of 90° domains to relax stress that arises due to the opposite signs of the converse piezoelectric effects in the switched 180° domain and the unswitched film surrounding. It was found that the formation of 90° domains can be effective mechanism for the piezostress relaxation in 180° domains and their stabilization.
Notes	cited By 41
Journal	Applied Physics Letters
Volume	84
Year of Publication	2004
Number	2
Pagination	254-256
ISSN Number	00036951
Keywords	Atomic force microscopy Epitaxial growth Piezoelectricity Ferroelectric thin films Electric conductivity Piezoresponse force microscopy (PFM) Relaxation processes Epitaxial ferroelectric thin films
Organizations	No Organization
Research Areas	Ramesh Lab
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