Galvanomagnetic properties of epitaxial MnAl films on GaAs

Publication Type
Journal Article
Authors
DOI
10.1063/1.348298
Abstract
Single-crystal films of τ-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.
Notes
cited By 49
Journal
Journal of Applied Physics
Volume
69
Year of Publication
1991
Number
8
Pagination
4689-4691
ISSN Number
00218979
Research Areas
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