Effect of uniaxial stress fields on the domain selection of epitaxial ferroelectric films

Publication Type
Journal Article
Authors
DOI
10.1080/00150199908016461
Abstract
The effect of uniaxial external stress fields applied during the cooling down from the deposition temperature on the domain structure of epitaxial ferroelectric or ferroelastic films is investigated using the domain stability map. This map predicts stable domain structures and is constructed in the coordinates of the misfit strain between the cubic substrate and the film, and the tetragonality of the film. It is shown that with the application of a stress field perpendicular to the film-substrate interface, perfectly c-axis oriented films may be obtained.
Notes
cited By 2
Journal
Ferroelectrics
Volume
221
Year of Publication
1999
Number
1-4
Pagination
245-250
Publisher
Taylor and Francis Inc.
ISSN Number
00150193
Research Areas
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