Breakdown of equilibrium approximation for nanosecond laser-induced electron emission from silicon

Date Published
09/1998
Publication Type
Journal Article
Authors
DOI
10.1063/1.121886
LBL Report Number
LBNL-42106
Abstract

We demonstrate that nonequilibrium carrier dynamics play a significant role in nanosecond laser-induced electron emission from semiconductor surfaces. Surface emission current and electron yields due to thermionic and photoelectric effects are calculated for a 2 ns laser pulse irradiation, with fluences below the threshold for melting. The photoelectric effect is found to dominate electron emission only at low fluences, whereas thermionic emission from interband absorption is responsible for electron emission at high incident fluences. The results present a satisfactory interpretation of experimental observations for nanosecond laser-induced electron emission from silicon.

Journal
Applied Physics Letters
Volume
73
Year of Publication
1998
Issue
10
Pagination
1331-1333
Short Title
Appl. Phys. Lett.
Keywords
Organizations
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