Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

Wide bandgap perovskite oxides with high room temperature conductivities and structuralcompatibility with a diverse family of organic/inorganic perovskite materials are of significantinterest as transparent conductors and as active components in power electronics. Suchmaterials must also possess high room temperature mobility to minimize power consumptionand to enable high-frequency applications. Here, we report n-type BaSnO3films grown usinghybrid molecular beam epitaxy with room temperature conductivity exceeding 104Scm1.Significantly, these films show room temperature mobilities up to 120 cm2V1s1even atcarrier concentrations above 31020cm3together with a wide bandgap (3 eV). Weexamine the mobility-limiting scattering mechanisms by calculating temperature-dependentmobility, and Seebeck coefficient using the Boltzmann transport framework andab-initiocalculations. These results place perovskite oxide semiconductors for the first time on parwith the highly successful III–N system, thereby bringing all-transparent, high-power oxideelectronics operating at room temperature a step closer to reality.