Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3

Publication Type	Journal Article

Authors	P Barrozo D.R Småbråten Y.-L Tang B Prasad S Saremi R Ozgur V Thakare R.A Steinhardt M.E Holtz V.A Stoica L.W Martin D.G Schlom S.M Selbach Ramamoorthy Ramesh
DOI	10.1002/adma.202000508
Abstract	Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Notes	cited By 0
Journal	Advanced Materials
Year of Publication	2020
Publisher	Wiley-VCH Verlag
ISSN Number	09359648
Keywords	Defects Iron compounds Ferroelectric materials Ferroelectricity Calculations Growth rate Lead titanate Lutetium compounds Switching Enhanced polarization First-principles calculation Frequency dispersion Improper ferroelectrics Structural order parameter Switching behaviors Switching dynamics Switching voltages
Organizations	No Organization
Research Areas	Ramesh Lab
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