%0 Journal Article
%A Ramamoorthy Ramesh
%A K Luther
%A B Wilkens
%A D.L Hart
%A E Wang
%A J.M Tarascon
%A A Inam
%A X.D Wu
%A T Venkatesan
%B Applied Physics Letters
%D 1990
%G eng
%P 1505-1507
%R 10.1063/1.104128
%T Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition
%V 57
%X Epitaxial thin films of ferroelectric bismuth titanate Bi 4Ti3O12 have been grown by pulsed laser deposition on single-crystal [100] SrTiO3 substrates. Bismuth titanate has a high Curie temperature (675°C) and saturation polarization values of 4 and 50 μC/cm2 along the c and b axis, respectively. Its a,b lattice parameters allow thin-film growth on substrates such as SrTiO3, LaAlO3, MgO, etc. These single crystalline films exhibit good quality as evidenced by x-ray diffraction, Rutherford backscattering, and transmission electron microscopy. Applications for these films include memory devices and optical displays.