%0 Journal Article
%A Ramamoorthy Ramesh
%A A Inam
%A W.K Chan
%A B Wilkens
%A F Tillerot
%A T Sands
%A J.M Tarascon
%A J Bullington
%A J Evans
%B Integrated Ferroelectrics
%D 1992
%G eng
%P 205-212
%R 10.1080/10584589208215712
%T Ferroelectric pbzr0.2ti0.8o3 thin films on epitaxial y-ba-cu-o
%V 1
%X Using a combination of pulsed laser deposition and sol-gel processing, we have fabricated epitaxial PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline [001] LaAlO3- Rutherford Backscattering studies show the composition to be the same as the nominal starting composition. Transmission electron microscopy shows the existence of a randomly oriented polycrystalline microstructure in the PZT layer with a grain size of about 500–1000Å. Microscopic pores were also observed in the PZT layer. The PZT film exhibits ferroelectric hysteresis with a saturation polarization of 22–25μC/cm2 (at 7.5V, 1kHz), a remanence of 5–6μC/cm2 and a coercive field of about 40kV/cm. © 1992, Taylor & Francis Group, LLC. All rights reserved.