%0 Journal Article
%K pulsed laser deposition
%K film growth
%K Ferroelectric materials
%K Ferroelectric devices
%K Ferroelectric capacitors
%K Capacitors
%K X ray diffraction analysis
%K Pulsed laser applications
%K Semiconducting gallium arsenide
%K Capacitor storage
%A D Young
%A A Christou
%A Ramamoorthy Ramesh
%A D.K Fork
%A B Krusor
%B Integrated Ferroelectrics
%D 1996
%G eng
%I Taylor and Francis Inc.
%P 63-69
%R 10.1080/10584589608225749
%T Growth of (001) oriented La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O ferroelectric capacitors on (001) GaAs with a MgO buffer layer
%V 12
%X Thin film La0.5Sr0.5CoO3Pb0.9La 0.1Zr0.2Ti0.3O3/La 0.5Sr0.5CoO3 capacitor structures (LSCO/PLZT/LSCO) have been grown on (001) GaAs substrates with MgO as a buffer layer. The MgO films on GaAs were grown by pulsed laser deposition and electron-beam evaporation and the capacitor heterostructures were grown using pulsed laser deposition. X-ray diffraction (XRD) showed all films to be (001) oriented. Ferroelectric capacitors were fabricated to determine their electrical behavior: the films showed resistivity above 1010 ohms/cm2, a typical saturation polarization of 20-30 μC/cm2, minimum retention loss, low time-dependent imprint and negligible fatigue up to 1011 cycles. These characteristics indicate that high-quality (001) oriented PLZT can be easily integrated with GaAs substrates, and could be used to produce GaAs-based electrical and, more importantly, optical devices.