%0 Journal Article
%A C.-H Chen
%A V Talyansky
%A C Kwon
%A M Rajeswari
%A R.P Sharma
%A Ramamoorthy Ramesh
%A T Venkatesan
%A J Melngailis
%A Z Zhang
%A W.K Chu
%B Applied Physics Letters
%D 1996
%G eng
%I American Institute of Physics Inc.
%P 3089-3091
%R 10.1063/1.117314
%T Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3
%V 69
%X Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011-1015 ions/cm2) of 200 keV Ar+ ions. The implanted samples were examined by ion channeling and x-ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013 ions/cm2. In this low dose implantation regime, the magnetoresistance MR=[R(0)-R(H)]/R(0) increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013 ions/cm2, the damage was significant and caused the sample to become semiconducting. © 1996 American Institute of Physics.