%0 Journal Article
%K semiconductor
%K Article
%K priority journal
%K Electron transport
%K chemical composition
%K computer memory
%A S Mathews
%A Ramamoorthy Ramesh
%A T Venkatesan
%A J Benedetto
%B Science
%D 1997
%G eng
%P 238-240
%R 10.1126/science.276.5310.238
%T Ferroelectric field effect transistor based on epitaxial perovskite heterostructures
%V 276
%X Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be 'tuned' by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.