%0 Journal Article
%K Magnetoresistance
%K Yttrium compounds
%K Lanthanum compounds
%K Polarization
%K High temperature superconductors
%K Heterojunctions
%K Neodymium compounds
%K Spin dynamics
%K Critical current density (superconductivity)
%K Electron transport properties
%K Superconducting devices
%K Electric conductivity measurement
%K Gain measurement
%K Magnetic relaxation
%K Equilibrium density of pairs
%K Joule heating
%K Spin polarized quasiparticle injection device
%K Transport measurement
%A Z.W Dong
%A Ramamoorthy Ramesh
%A T Venkatesan
%A M Johnson
%A Z.Y Chen
%A S.P Pai
%A V Talyansky
%A R.P Sharma
%A R Shreekala
%A C.J Lobb
%A R.L Greene
%B Applied Physics Letters
%D 1997
%G eng
%I American Institute of Physics Inc.
%P 1718-1720
%R 10.1063/1.120014
%T Spin-polarized quasiparticle injection devices using Au/YBa2Cu3O7/LaAIO3/Nd 0.7Sr0.3MnO3 heterostructures
%V 71
%X Oxide heterostructures were used for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of injection of spin polarized quasiparticles from a ferromagnetic gate layer was compared to that of unpolarized quasiparticles from a nonmagnetic metallic gate. Transport measurements of the superconducting layer showed strong suppression in the supercurrent by the injection of spin-polarized quasiparticles, and a current gain of as large as five was attained. This is 10 to 30 times larger than the gain of unpolarized injection devices. Such large effects could be useful in a variety of active high-Tc superconductor/colossal magnetoresistance heterostructure based devices. © 1997 American Institute of Physics.