%0 Journal Article
%A Z.W Dong
%A S.P Pai
%A Ramamoorthy Ramesh
%A T Venkatesan
%A M Johnson
%A Z.Y Chen
%A A Cavanaugh
%A Y.G Zhao
%A X.L Jiang
%A R.P Sharma
%A S Ogale
%A R.L Greene
%B Journal of Applied Physics
%D 1998
%G eng
%I American Institute of Physics Inc.
%P 6780-6782
%R 10.1063/1.367764
%T Novel high-Tc transistors with manganite oxides
%V 83
%X One viable approach for transistor-like high-Tc three terminal devices is the quasiparticle injection device (QPID). We have fabricated Au/YBa2Cu3O7/LaAlO3/Nd 0.7Sr0.3MnO3 (NSMO) and Au/YBa 2Cu3O7/LaAlO3/LaNiO3 (LNO) heterostructures on (100) LaAlO3 substrates by pulsed laser deposition for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of the injection of spin-polarized quasiparticles from a ferromagnetic NSMO gate was compared to that of unpolarized quasiparticles from a nonmagnetic metallic LNO gate. A current gain greater than nine has been attained for spin-polarized QPIDs, which is an order of magnitude larger than the gain of spin unpolarized QPIDs. Such large effects could be useful in a variety of active high-Tc/colossal magnetoresistance heterostnicture devices. © 1998 American Institute of Physics.