%0 Conference Paper
%K Microstructure
%K Thin films
%K Titanium compounds
%K Ferroelectric materials
%K Textures
%K Coercive force
%K Domain structure
%K Correlation methods
%K Ceramic capacitors
%A H Li
%A B Yang
%A A Dhote
%A S Aggarwal
%A L Salamanca-Riba
%A Ramamoorthy Ramesh
%B Materials Research Society Symposium - Proceedings
%D 1998
%G eng
%I MRS, Warrendale, PA, United States
%P 171-176
%T Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors
%V 493
%X Epitaxial 0%, 3% and 10% La doped PZT capacitors with a LSCO bottom electrode grown by pulsed laser deposition on Si using a Ti(Al)N/Pt conducting barrier layer were systematically studied. Ferroelectric capacitors substituted with 10% La show a significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to the systematic variation of the domain structure of the PLZT film with the increase of La concentration. The in-plane orientation relationship of this heterostructure is: [110]PLZT//[110]LSCO//[110]Pt// [110]Ti(Al)N//[110]Si. The morphology of the domains as a function of La concentration was studied using high resolution transmission electron microscopy(HREM). The Pt/Ti(Al)N conducting barrier layer stack is intact after the deposition of the LSCO/PLZT/LSCO stack. All Ti(Al)N layers in the samples studied consist of column-like structures with a [110] texture.