%0 Conference Paper
%K Cooling
%K Thin films
%K Film growth
%K Oxygen
%K Ferroelectric materials
%K Lanthanum
%K Doping (additives)
%K Lead compounds
%K Crystal defects
%K Partial pressure
%K Doppler effect
%K Positron annihilation
%K Dielectric films
%K Vacancy-related defects
%A T Friessnegg
%A S Aggarwal
%A B Nielsen
%A Ramamoorthy Ramesh
%A D.J Keeble
%A E.H Poindexter
%B IEEE International Symposium on Applications of Ferroelectrics
%D 1998
%G eng
%I IEEE, Piscataway, NJ, United States
%P 147-150
%T Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation
%X The formation of vacancy-type defects in Pb(1-x)Lax(Zr0.2Ti0.8)O3 (PLZT) thin films was studied as a function of lanthanum doping x and after cooling in an oxygen reduced ambient. The Doppler-broadening S parameter indicates that Pb-vacancies are progressively introduced upon La-doping. Cooling of Pb(Zr0.2Ti0.8)O3 and Pb0.9La0.1(Zr0.2Ti0.8)O3 thin films in 10-5 Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are lead-oxygen vacancy complexes.