%0 Conference Paper
%K Cooling
%K Thin films
%K Film growth
%K Oxygen
%K Ferroelectric materials
%K Lanthanum
%K Doping (additives)
%K Lead compounds
%K Crystal defects
%K Partial pressure
%K Doppler effect
%K Positron annihilation
%K Dielectric films
%K Vacancy-related defects
%A T Friessnegg
%A S Aggarwal
%A B Nielsen
%A Ramamoorthy Ramesh
%A D.J Keeble
%A E.H Poindexter
%B IEEE International Symposium on Applications of Ferroelectrics
%D 1998
%G eng
%I IEEE, Piscataway, NJ, United States
%P 147-150
%S IEEE International Symposium on Applications of Ferroelectrics
%T Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation