%0 Journal Article
%A C.S Ganpule
%A A Stanishevsky
%A S Aggarwal
%A J Melngailis
%A E Williams
%A Ramamoorthy Ramesh
%A V Joshi
%A C. Paz De Araujo
%B Applied Physics Letters
%D 1999
%G eng
%I American Institute of Physics Inc.
%P 3874-3876
%R 10.1063/1.125485
%T Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films
%V 75
%X Scaling of the ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films was studied. Focused ion beam milling was used to fabricate submicron devices (1 × 1, 0.5 × 0.5, 0.25 × 0.25, 0.09 × 0.09, and 0.07 × 0.07 μm2) and scanning force microscopy was used to examine their piezoelectric response. It was found that capacitors as small as 0.09 × 0.09 μm2 exhibit good piezoelectric/ferroelectric properties and that submicron (0.25 × 0.25 μm2) capacitors show resistance to bipolar fatigue with up to at least 109 cycles. The results were compared with similar capacitor structures milled in the Pb1.0(Nb0.04Zr0.28Ti0.68)O 3 system where structures as small as 0.07 × 0.07 μm2 were analyzed. © 1999 American Institute of Physics.