%0 Journal Article
%A T Friessnegg
%A S Aggarwal
%A Ramamoorthy Ramesh
%A B Nielsen
%A E.H Poindexter
%A D.J Keeble
%B Applied Physics Letters
%D 2000
%G eng
%I American Institute of Physics Inc.
%P 127-129
%R 10.1063/1.126898
%T Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset
%V 77
%X Vacancy-related defect profiles have been measured for La0.5Sr0.5CoO3/(Pb0.9La 0.1) × (Zr0.2Ti0.8)O3/La0.5Sr 0.5CoO3 ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. © 2000 American Institute of Physics.