%0 Journal Article
%A C.L Canedy
%A S Aggarwal
%A H Li
%A T Venkatesan
%A Ramamoorthy Ramesh
%A F.W Van Keuls
%A R.R Romanofsky
%A F.A Miranda
%B Applied Physics Letters
%D 2000
%G eng
%I American Institute of Physics Inc.
%P 1523-1525
%R 10.1063/1.1290724
%T Structural and dielectric properties of epitaxial Ba1-xSrxTiO3/Bi4Ti3O 12/ZrO2 heterostructures grown on silicon
%V 77