%0 Conference Paper
%K pulsed laser deposition
%K substrates
%K lanthanum compounds
%K Epitaxial growth
%K Heterojunctions
%K Doping (additives)
%K Colossal magnetoresistance
%K Field effect semiconductor devices
%K Dielectric heterostructures
%A T Wu
%A S.B Ogale
%A J.E Garrison
%A B Nagaraj
%A Z Chen
%A Ramamoorthy Ramesh
%A T Venkatesan
%A Rzchowski M.S
%A Kawasaki M
%A Millis A.J
%A Molnar S
%A Rajeswari M
%B Materials Research Society Symposium - Proceedings
%D 2000
%G eng
%P 363-370
%T Deposition and electrical characterization of dielectric/ferromagnetic heterostructure
%V 602
%X <p>We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.</p>