%0 Conference Paper
%K oxidation
%K thin films
%K glass
%K X ray diffraction
%K X ray photoelectron spectroscopy
%K Molybdenum
%K Desorption peak
%K Field emitter arrays
%K Partial oxidation
%K Thermal desorption spectroscopy
%K Ultraviolet photoelectron spectroscopy
%A B.R Chalamala
%A R.H Reuss
%A Y Wei
%A J.M Bernhard
%A E.D Sosa
%A D.E Golden
%A S Aggarwal
%A Ramamoorthy Ramesh
%B Materials Research Society Symposium Proceedings
%D 2001
%G eng
%P 353-358
%T Oxidation of molybdenum thin films and its impact on molybdenum field emitter arrays
%V 685
%@ 1558996214; 9781558996212
%X Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C. © 2001 Materials Research Society.