%0 Conference Paper
%K Electric potential
%K Hysteresis
%K Ferroelectric materials
%K Carrier concentration
%K Field effect transistors
%K Solid solutions
%K Gate voltage
%A A.G Schrott
%A J.A Misewich
%A Ramamoorthy Ramesh
%A V Nagarajan
%A Ginley D
%A Guha S
%A Carter S
%A Chambers S.A
%A Droopad R
%A Hosono H
%A Paine D.C
%A Schlom D.G
%A Tate J
%B Materials Research Society Symposium - Proceedings
%D 2003
%G eng
%P 287-292
%T Ferroelectric field effect device
%V 747
%X <p>A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF-state free carrier concentration to provide proper balancing charge for ferroelectric stability. The dependence of channel resistance with gate voltage at room temperature yields a hysteresis curve with two state at zero volts with a ΔR/R of 75% and a coercive voltage of 3 volts. The device was subjected to more than 1010 cycles with no degradation and was also operated at 60° C with a only a slight reduction in the switching ratio.</p>