%0 Conference Paper
%K thin films
%K electrodes
%K pyrolysis
%K Epitaxial growth
%K Silicon wafers
%K Capacitors
%K Electrical characteristics
%K Fatigue endurance
%K Low-temperature fabrication
%K Differential thermal analysis
%K Low temperature effects
%K Sol-gels
%A K Maki
%A B.T Liu
%A Y So
%A H Vu
%A Ramamoorthy Ramesh
%A J Finder
%A Z Yu
%A R Droopad
%A K Eisenbeiser
%B Integrated Ferroelectrics
%D 2003
%G eng
%P 19-31
%R 10.1080/10584580390254088
%T Low-temperature fabrication of epitaxial and random-oriented Pb(Zr,Ti)O 3 capacitors with SrRuO 3 electrodes on Si wafers
%V 52
%X Epitaxial and random-oriented Pb(Zr,Ti)O 3 (PZT) films were fabricated at 450-550°C on SrRuO 3 (SRO)/SrTiO 3/Si and SRO/amorphous Ti-Al layer-Si substrates, respectively, using a modified sol-gel process. For comparison, polycrystalline PZT films were also prepared on Pt-Si substrates using the same method. Thermogravimetric and differential thermal analysis (TG-DTA) of the modified sol-gel solution indicated that the solution began crystallization below 400°C. Both SRO/epitaxial PZT/SRO and SRO/random-oriented PZT/SRO capacitors processed at the same temperature had similar polarization values, and all the SRO/PZT/SRO capacitors processed at 450-550°C exhibited the favorable electrical characteristics including high polarization, high resistivity, small pulse width dependence, and good fatigue endurance. While the Pt/PZT/Pt capacitors processed at 450°C showed considerably low polarization compared to the SRO/PZT/SRO capacitors processed at the same temperature. High-quality SRO/PZT/SRO capacitors processed at low temperature have a bright prospect of fabrication of potential Si devices integrated PZT capacitors without thermal degradation.