%0 Journal Article
%K Thin films
%K Composition
%K Fabrication
%K Cobalt compounds
%K Ferromagnetism
%K Ferroelectric materials
%K Permittivity
%K Magnetization
%K Heterojunctions
%K Piezoelectric materials
%K Magnetoelectric effects
%K Barium compounds
%K Nanometers
%K Layered composites
%K Multilayered structures
%K Piezoelectric phases
%K Quantum interference devices
%A K.-S Chang
%A M.A Aronova
%A C.-L Lin
%A M Murakami
%A M.-H Yu
%A J R Hattrick-Simpers
%A O.O Famodu
%A S.Y Lee
%A Ramamoorthy Ramesh
%A M Wuttig
%A I Takeuchi
%A C Gao
%A L.A Bendersky
%B Applied Physics Letters
%D 2004
%G eng
%P 3091-3093
%R 10.1063/1.1699474
%T Exploration of artificial multiferroic thin-film heterostructures using composition spreads
%V 84
%X The fabrication of a series of composition spreads consisting of ferroelectric BaTiO 3 and piezoelectric CoFe 2O 4 layers of varying thickness modulated at nanometer level in order to explore artificial magnetoresistance thin-film heterostructures was discussed. The scanning microwave microscopy and scanning superconducting quantum interference device microscopy were used for mapping the dielectric and magnetic properties as a function of continuously changing average composition across the spreads, respectively. The compositions in the middle of the spreads were found to exhibit ferromagnetism where as displaying a dielectric constant as high as ≈ 120.