%0 Journal Article
%K adsorption
%K thin films
%K molecular beam epitaxy
%K stoichiometry
%K bismuth oxides
%K Epitaxial growth
%K bismuth compounds
%K Differential vapor pressures
%K Adsorption-controlled growth
%A J.F Ihlefeld
%A A Kumar
%A V Gopalan
%A D.G Schlom
%A Y.B Chen
%A X.Q Pan
%A T Heeg
%A J Schubert
%A X Ke
%A P Schiffer
%A J Orenstein
%A L.W Martin
%A Y.H Chu
%A Ramamoorthy Ramesh
%B Applied Physics Letters
%D 2007
%G eng
%R 10.1063/1.2767771
%T Adsorption-controlled molecular-beam epitaxial growth of BiFe O3
%V 91
%X BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature. © 2007 American Institute of Physics.