%0 Journal Article
%K Silicon compounds
%K Lanthanum compounds
%K Bismuth compounds
%K Permittivity
%K Epitaxial films
%K Hysteresis loops
%K Substitution reactions
%K Coercive voltage
%K Control domain structure
%K Rhombohedral distortion
%A Y.H Chu
%A Q Zhan
%A C.-H Yang
%A M.P Cruz
%A L.W Martin
%A T Zhao
%A P Yu
%A Ramamoorthy Ramesh
%A P.T Joseph
%A I.N Lin
%A W Tian
%A D.G Schlom
%B Applied Physics Letters
%D 2008
%G eng
%R 10.1063/1.2897304
%T Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution
%V 92
%X We have probed the role of La substitution on the ferroelectric properties of epitaxial BiFe O3 films on SrTi O3 -templated Si. This provides a mechanism to engineer the rhombohedral distortion in the crystal and, thus, control domain structure and switching. With a 10% La substitution, the (Bi0.9 La0.1) Fe O3 film showed well-saturated ferroelectric hysteresis loops with a remanent polarization of 45 μC cm2, a converse piezoelectric coefficient d33 of 45 pmV, and a dielectric constant of 140. Over this range of La substitution, the coercive field systematically decreases such that a coercive voltage of 1 V can been obtained in a 100 nm thick film. These results show promise for the ultimate implementation of this lead-free multiferroic operating at voltages in the range of 2-3 V. © 2008 American Institute of Physics.