%0 Conference Paper
%K adsorption
%K thin films
%K molecular beam epitaxy
%K stoichiometry
%K bismuth oxides
%K crystal growth
%K vapor pressure
%K semiconductor growth
%K Semiconductor materials
%K Ferroelectric materials
%K Epitaxial growth
%K Energy gap
%K Single crystals
%K bismuth
%K electric conductivity
%K Epitaxial films
%K Semiconducting bismuth compounds
%K Growth (materials)
%K Semiconducting silicon compounds
%K Gallium alloys
%K Crystals
%K Epitaxial layers
%K Gallium nitride
%K Hydrostatic pressure
%K Metallorganic vapor phase epitaxy
%K Semiconducting gallium
%K Silicon carbide
%K Algan/gan
%K Controlled growths
%K Differential vapor pressures
%K Hemt structures
%K Molecular-beam epitaxies
%K Plane orientations
%K Plane rotations
%K Rocking curves
%K Semi-conductors
%K SiC single crystals
%K Wide bands
%K X-ray diffractions
%A J.F Ihlefeld
%A W Tian
%A Z.K Liu
%A W.A Doolittle
%A M Bernhagen
%A P Reiche
%A R Uecker
%A Ramamoorthy Ramesh
%A D.G Schlom
%B IEEE International Symposium on Applications of Ferroelectrics
%D 2008
%G eng
%R 10.1109/ISAF.2008.4693774
%T Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors
%V 3
%@ 1424427444; 9781424427444
%X BiFeO3 thin films have been deposited on (101) DyScO 3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002°). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [112̄0] BiFeO3 || [112̄0] GaN (SiC) plus a twin variant related by a 180° in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.