%0 Conference Paper
%K Lead
%K Thin films
%K Zirconium
%K Ferroelectric materials
%K Ferroelectric films
%K Ferroelectric thin films
%K Coercive voltages
%K Do-mains
%K Nanodots
%K Retention properties
%A N Balke
%A P Yu
%A L.-P Wang
%A Ramamoorthy Ramesh
%B IEEE International Symposium on Applications of Ferroelectrics
%D 2008
%G eng
%R 10.1109/ISAF.2008.4693909
%T CH003: Stability of nanodots in ferroelectric thin films
%V 1
%@ 1424427444; 9781424427444
%X Retention properties of written nanodots for Pb(Zr0.2Ti 0.8)O3 have been investigated. The imaging voltage plays an important role when investigating small unstable domains. Even with an imaging voltage far below the coercive voltage the boundaries of the domains are switched during imaging by what the measured nanodomain stability is strongly influenced.