%0 Journal Article
%K Stoichiometry
%K Spatial distribution
%K Electronic states
%K Electronic structure
%K Band gaps
%K Growth conditions
%K Semiconducting bismuth compounds
%K Cathodoluminescence spectroscopy
%K Defect emission
%K Defect state
%K Depth-resolved
%K Film properties
%K Interface electronics
%K Localized electronic state
%K Near-band edge emissions
%A J Zhang
%A M Rutkowski
%A L.W Martin
%A T Conry
%A Ramamoorthy Ramesh
%A J.F Ihlefeld
%A A Melville
%A D.G Schlom
%A L.J Brillson
%B Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
%D 2009
%G eng
%P 2012-2014
%R 10.1116/1.3130152
%T Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films
%V 27