%0 Journal Article
%K Ferromagnetism
%K Polarization
%K Ferroelectric materials
%K Magnetism
%K Ferroelectricity
%K Ferroelectric polarization
%K Ferromagnetic materials
%K Ferromagnetic layers
%K Interface states
%K Magnets
%K Superconducting materials
%K Spin polarization
%K Magnetoelectronics
%K Magnetic couplings
%K Exchange bias couplings
%K Spintronic device
%K Theoretical calculations
%K Tunnel junctions
%K Ferroelectric tunnel junctions
%K Low-power consumption
%K Magnetic electrodes
%A Ramamoorthy Ramesh
%B Nature Materials
%D 2010
%G eng
%I Nature Publishing Group
%P 380-381
%R 10.1038/nmat2762
%T Ferroelectrics: A new spin on spintronics
%V 9
%X The use of interface effects for low-power-consumption spintronic devices with the help of a ferroelectric tunnel junction to control the spin polarization of adjacent magnetic electrodes is discussed. The ever-increasing demand for faster, smaller and non-volatile electronics is pushing the limits of present semiconductor-based information processing and storage systems. Ferromagnetic layers in contact with an anti-ferromagnet exhibit an interfacial magnetic coupling termed as exchange bias coupling. Theoretical calculations have predicted the possibility of significant changes in the interfacial magnetization and spin polarization in a ferromagnet in response to the ferroelectric polarization state across the interface. Ferromagnetism and spin polarization can be controlled and manipulated through a coupling of a magnetic layer to a ferroelectric or a multiferroic.