%0 Journal Article
%K Lead
%K Thin films
%K Zirconium
%K Domain walls
%K Ferroelectric switching
%K Ferroelastic domains
%K Applied field
%K Film orientations
%K High field
%K Kolmogorov
%K Standard system
%K Switching kinetics
%A D Pantel
%A Y.-H Chu
%A L.W Martin
%A Ramamoorthy Ramesh
%A D Hesse
%A M Alexe
%B Journal of Applied Physics
%D 2010
%G eng
%R 10.1063/1.3392884
%T Switching kinetics in epitaxial BiFeO3 thin films
%V 107
%X The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO3 thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb (Zr0.2 Ti0.8) O3 films, reveals some similarities as well as some differences. For instance, the presence of 109° and 71° ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb (Zr 0.2 Ti0.8) O3. © 2010 American Institute of Physics.