%0 Journal Article
%A J Ravichandran
%A W Siemons
%A M.L Scullin
%A S Mukerjee
%A M Huijben
%A J.E Moore
%A A Majumdar
%A Ramamoorthy Ramesh
%B Physical Review B - Condensed Matter and Materials Physics
%D 2011
%G eng
%R 10.1103/PhysRevB.83.035101
%T Tuning the electronic effective mass in double-doped SrTiO3
%V 83
%X We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO 3-δ, we can tune the effective mass ranging from 6 to 20m e as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum- and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-δ. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors. © 2011 The American Physical Society.