%0 Journal Article
%K temperature
%K microscopy
%K electron
%K chemistry
%K electrons
%K density functional theory
%K Multiferroics
%K Polarization
%K Domain walls
%K Article
%K bismuth
%K Electronic properties
%K scanning tunneling microscopy
%K Electronic configuration
%K Cross-sectional scanning tunneling microscopies
%K Electronic structure
%K ferric ion
%K Ferric Compounds
%K Conducting channels
%K Domain boundary
%K Band gaps
%K Scanning
%K Atomic scale
%K BiFeO<sub>3</sub>
%K Built-in potential
%K Local electronic structures
%K polarization discontinuity
%K scanning tunneling microscopy (STM)
%K Walls (structural partitions)
%K Scanning Tunneling
%A Y.-P Chiu
%A Y.-T Chen
%A B.-C Huang
%A M.-C Shih
%A J.-C Yang
%A Q He
%A C.-W Liang
%A J Seidel
%A Y.-C Chen
%A Ramamoorthy Ramesh
%A Y.-H Chu
%B Advanced Materials
%D 2011
%G eng
%P 1530-1534
%R 10.1002/adma.201004143
%T Atomic-scale evolution of local electronic structure across multiferroic domain walls
%V 23
%X Direct evidence of the electronic configurations across domain walls in BiFeO3 is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109° domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm. Copyright © 2011 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.