%0 Journal Article
%K Pulsed laser deposition
%K Molecular beam epitaxy
%K Thermal conductivity
%K Epitaxial growth
%K Single crystals
%K Temperature range
%K Strontium titanates
%K Strontium alloys
%K Crystalline materials
%K SrTiO
%K Bulk single crystals
%K Crystalline quality
%K Growth conditions
%K Growth techniques
%K Homeopitaxial layers
%K Target materials
%K Time domain thermoreflectance
%K Diffractive optics
%K Molecular beams
%K Point defects
%K Surface defects
%K Time domain analysis
%A D.-W Oh
%A J Ravichandran
%A C.-W Liang
%A W Siemons
%A B Jalan
%A C.M Brooks
%A M Huijben
%A D.G Schlom
%A S Stemmer
%A L.W Martin
%A A Majumdar
%A Ramamoorthy Ramesh
%A D.G Cahill
%B Applied Physics Letters
%D 2011
%G eng
%R 10.1063/1.3579993
%T Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers
%V 98
%X Measurements of thermal conductivity by time-domain thermoreflectance in the temperature range 100<T<300 K are used to characterize the crystalline quality of epitaxial layers of a prototypical oxide, SrTiO3. Twenty samples from five institutions using two growth techniques, molecular beam epitaxy and pulsed laser deposition (PLD), were analyzed. Optimized growth conditions produce layers with comparable to bulk single crystals. Many PLD layers, particularly those that use ceramics as the target material, show surprisingly low . For homoepitaxial layers, the decrease in created by point defects correlates well with the expansion of the lattice parameter in the direction normal to the surface. © 2011 American Institute of Physics.