%0 Journal Article
%K Pulsed laser deposition
%K Copper
%K Films
%K Zinc oxide
%K Zno
%K Transparency
%K Heterojunctions
%K Semiconductor doping
%K Acceptor doping
%K Cu content
%K Hall effect measurement
%K Heterojunction diodes
%K High transparency
%K Hole conduction
%K Hole conductivity
%K P-type
%K S-phase
%K Transparent conducting materials
%K Transparent conductors
%K Semiconductor diodes
%K Zinc sulfide
%A A.M Diamond
%A L Corbellini
%A K.R Balasubramaniam
%A S Chen
%A S Wang
%A T.S Matthews
%A L.-W Wang
%A Ramamoorthy Ramesh
%A Joel W Ager
%B Physica Status Solidi (A) Applications and Materials Science
%D 2012
%G eng
%P 2101-2107
%R 10.1002/pssa.201228181
%T Copper-alloyed ZnS as a p-type transparent conducting material
%V 209
%X Copper alloyed ZnS was investigated as a p-type, transparent conducting material composed of earth-abundant elements. Thin films of Cu-alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06-0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p-type. We find that transparency and conductivity are comparable to some of the best reported p-type materials with our best films exhibiting conductivities of 54 S cm -1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p-CuZnS/n-ZnO diodes were fabricated. Photo demonstrating the high transparency of a rectifying heterojunction diode made with p-type Cu-alloyed ZnS and n-type ZnO. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.