%0 Journal Article
%A H Taz
%A B Prasad
%A Y.-L Huang
%A Z Chen
%A S.-L Hsu
%A R Xu
%A V Thakare
%A T.S Sakthivel
%A C Liu
%A M Hettick
%A R Mukherjee
%A S Seal
%A L.W Martin
%A A Javey
%A G Duscher
%A Ramamoorthy Ramesh
%A R Kalyanaraman
%B Scientific Reports
%D 2020
%G eng
%I Nature Research
%R 10.1038/s41598-020-58592-5
%T Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
%V 10
%X A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity ( 500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment ( 200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after  1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields. © 2020, The Author(s).