%0 Journal Article
%K laser radiation
%K copper oxides
%K high−tc superconductors
%K barium oxides
%K film growth
%K yttrium oxides
%K cerium oxides
%K crystal structure
%K energy beam deposition films
%K ion beams
%K physical vapor deposition
%A Ronald P Reade
%A Stefan R Church
%A Richard E Russo
%B Review of Scientific Instrumentation
%D 1995
%F Laser
%G eng
%N 6
%P 3610-3614
%R 10.1063/1.1146496
%T Ion assisted pulsed laser deposition
%V 66
%2 LBNL-36978
%! Rev. Sci. Instrum.
%X <p>Ion bombardment on the surface of a substrate during deposition of a thin film [ion‐assisted (IA) deposition] is used to control thin‐film crystalline orientation and phase. Ion‐assisted deposition is demonstrated with the relatively new pulsed‐laser deposition (PLD) technique, a method of thin‐film growth that has shown promise for the synthesis of high‐temperature superconductor and other complex oxide films. A versatile vacuum chamber with independent control of ion‐gun parameters was developed for ion‐assisted pulsed‐laser deposition (IAPLD). Control of crystalline orientation and alignment of yttria‐stabilized zirconia and CeO<sub>2</sub> layers for use in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ</sub> superconductor devices is demonstrated using this IAPLD technology.</p>