%0 Journal Article
%K deposition
%K pulsed laser deposition
%K laser
%K ybacuo
%K layers
%K structure
%K pulsed laser
%K pulsed-laser
%K layer
%K dielectric
%K laser deposition
%K pulsed-laser-deposition
%K amorphous
%K multichip modules
%A Ronald P Reade
%A Paul H Berdahl
%A Leonard W Schaper
%A Richard E Russo
%B Applied Physics Letters
%D 1995
%F Laser
%G eng
%M 57
%N 15
%P 2001-2003
%R 10.1063/1.114285
%T Y-Ba-Cu-O multilayer structures with amorphous dielectric layers for multichip modules using ion-assisted pulsed laser deposition
%V 66
%2 LBNL-36910
%! Appl. Phys. Lett.
%X <p>Existing technology to construct high‐temperature superconductor(HTSC) multichip modules (MCM’s) incorporating several YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ</sub>(YBCO)thin films and thick dielectric layers are based on epitaxial growth of all layers from the template of a single‐crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria‐stabilized zirconia (YSZ) intermediate layer deposited by ion‐assisted pulsed‐laser deposition. Using this technique, a YBCO thin film with <em>T</em> <sub> <em>c</em> </sub>∼87 K and <em>J</em> <sub> <em>c</em> </sub>∼3×10<sup>5</sup> A/cm<sup>2</sup> was grown on a 5 μm amorphous SiO<sub>2</sub> layer. In addition, YBCO/YSZ/SiO<sub>2</sub>/YSZ/YBCO/CeO<sub>2</sub>/YSZ and YBCO/YSZ/amorphous‐YSZ/YBCO/CeO<sub>2</sub>/YBCO multilayer structures were constructed.</p>